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IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
TO-247 (IXFH) Outline
Min. Typ. Max.
g fs
V DS = 20 V; I D = 0.5 I D25 , Note 1
9
16
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
2500
280
pF
pF
1
2
3
C rss
t d(on)
23
21
pF
ns
t r
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
22
ns
t d(off)
R G = 5 Ω (External)
62
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
22
ns
Dim.
Millimeter
Inches
A 1
A 2
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
50
15
18
nC
nC
nC
Min. Max.
A 4.7 5.3
2.2 2.54
2.2 2.6
b 1.0 1.4
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
b 1
b 2
R thJC
R thCS
(TO-247, PLUS220)
0.21
0.35
° C/W
° C/W
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
.610 .640
0.205 0.225
Source-Drain Diode
Characteristic Values
L 19.81 20.32
.780 .800
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.177
.140 .144
0.232 0.252
I S
V GS = 0 V
18
A
R 4.32 5.49
S 6.15 BSC
.170 .216
242 BSC
I SM
V SD
Repetitive
I F = I S , V GS = 0 V, Note 1
54
1.5
A
V
PLUS220 (IXFV) Outline
t rr
Q RM
F RM
I S = 18 A, -di/dt = 100 A/ μ s
V R = 100 V, V GS = 0 V
0.8
5
200
ns
μ C
A
Note 1: Pulse test, t ≤ 300 μ s, duty cycled ≤ 2 %
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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